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Proceedings Paper

Novel polymeric sulfonium photoacid generator and its application for chemically amplified photoresists
Author(s): Juan Liu; Yu Qiao; Liyuan Wang
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Paper Abstract

Chemically amplified resists (CARs) which involved the photoacid generator (PAG) have been widely used because of the high sensitivity. The inherent incompatibility between the polymer matrix and small molecular PAGs leads to problems including PAG phase separation, non-uniform initial PAG and photoacid distribution, as well as acid migration during the post-exposure baking (PEB) processes. The polymeric PAGs based resist systems which incorporated the PAG units into the main chain showed improved lithographic performance, such as faster photospeed and higher stability, lower outgassing, and lower LER than corresponding blend resists. In this paper, a novel type of polymeric PAGs based on poly (4-hydroxylstyrene) (PHS) was discussed. Chemically amplified photorssists were formed by the polymeric PAG and other film forming material containing acid labile groups. The polymeric PAGs showed advantage over the common small molecular PAG and patterns with 180 nm resolution was obtained in the 248-nm lithography.

Paper Details

Date Published: 27 March 2014
PDF: 8 pages
Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 905124 (27 March 2014); doi: 10.1117/12.2046217
Show Author Affiliations
Juan Liu, Beijing Normal Univ. (China)
Yu Qiao, Beijing Normal Univ. (China)
Liyuan Wang, Beijing Normal Univ. (China)


Published in SPIE Proceedings Vol. 9051:
Advances in Patterning Materials and Processes XXXI
Thomas I. Wallow; Christoph K. Hohle, Editor(s)

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