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Proceedings Paper

Aerial image of mesh supported extreme ultraviolet pellicle
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Paper Abstract

We report the effect of the mesh support for the EUV pellicle on the wafer pattern image. The intensity distribution passing through the meshed pellicle was simulated with a partially coherent EUV beam showing that its non-uniformity and the CD uniformity are increased with the mesh width. In order to reduce a non-uniformity of the intensity distribution and CD uniformity, the mesh width should be narrower and the height becomes smaller as well. Thus, the image deformation on the wafer due to the mesh can be avoided by optimizing the mesh structure and thus the pellicle with the mesh support can be used for the EUV lithography.

Paper Details

Date Published: 17 April 2014
PDF: 8 pages
Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90482D (17 April 2014); doi: 10.1117/12.2046202
Show Author Affiliations
Ki-ho Ko, Hanyang Univ. (Korea, Republic of)
Guk-Jin Kim, Hanyang Univ. (Korea, Republic of)
Michael Yeung, Fastlitho Inc. (United States)
Eytan Barouch, Boston Univ. (United States)
Mun-Ja Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Seung-Sue Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hye-Keun Oh, Hanyang Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 9048:
Extreme Ultraviolet (EUV) Lithography V
Obert R. Wood; Eric M. Panning, Editor(s)

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