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Proceedings Paper

Pattern environment impact on wafer of metal layers with high-NA process on advanced node
Author(s): Chain Ting Huang; Yung Feng Cheng; Ming Jui Chen
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Paper Abstract

In the High NA process, pattern environment will become very aggressive because of scattering effect. Especially on metal layers, maybe it will cause pattern bridge when the pattern density is varied. We need to find out the root cause and have a good solution to minimize the wafer CD difference that comes from environmental effect (pattern density). In this paper, we analyze the root cause by checking the pattern density influence on mask CD and wafer printing CD. We design different pattern density layout to measure the mask CD error, use AIMS (Aerial Image Measurement System) to measure the aerial image CD and print wafer to check the real result. Then, we try to add some assistant feature (pattern density balance) and use simulation tool to simulate whether this method can have improvement.

Paper Details

Date Published: 31 March 2014
PDF: 8 pages
Proc. SPIE 9052, Optical Microlithography XXVII, 90522A (31 March 2014); doi: 10.1117/12.2046195
Show Author Affiliations
Chain Ting Huang, United Microelectronics Corp. (Taiwan)
Yung Feng Cheng, United Microelectronics Corp. (Taiwan)
Ming Jui Chen, United Microelectronics Corp. (Taiwan)


Published in SPIE Proceedings Vol. 9052:
Optical Microlithography XXVII
Kafai Lai; Andreas Erdmann, Editor(s)

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