Share Email Print

Proceedings Paper

Experimental verification of the effect of phase defect shape on ABI signal intensity
Author(s): Noriaki Takagi; Tsuneo Terasawa; Yukiyasu Arisawa
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In this study, influence of geometric features of phase defect on EUV optical images, such as dark field images(ABI tool) and bright field images (Exposure tool), was studied with experiment and simulation. It is confirmed that ABI signal intensity has a direct relationship not only with defect volume but also with geometric features of the phase defect. A new method for the making of phase defect models for simulation purpose was attempted. With this new method, the simulated ABI signal intensity exhibited a good proportionality relationship with the experimentally obtained ABI signal intensity. This method is believed to be effective in the estimation of ABI signal intensity with simulation. These results lead to the conclusion that it is important to take into consideration the geometric features of phase defects when a relationship between ABI signal intensity and phase defect feature is to be examined. Also, the relationship between ABI signal intensity and impact of defect on wafer was studied with simulation. In this study, many geometric types of phase defects were used, and relationships between these defects and their impacts on wafers were studied. As a result, it was confirmed that the geometric features did not strongly affect the relationship between the ABI signal intensity and the defects’ impacts on wafer however the ABI signal intensity is found to have a close relationship with impact of defect on wafer. These results lead to the conclusion that information about ABI signal intensity is important not only for the detection of phase defect but also for estimating the impact of phase defects on wafers.

Paper Details

Date Published: 17 April 2014
PDF: 9 pages
Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 904822 (17 April 2014); doi: 10.1117/12.2046139
Show Author Affiliations
Noriaki Takagi, EUVL Infrastructure Development Ctr., Inc. (Japan)
Tsuneo Terasawa, EUVL Infrastructure Development Ctr., Inc. (Japan)
Yukiyasu Arisawa, EUVL Infrastructure Development Ctr., Inc. (Japan)

Published in SPIE Proceedings Vol. 9048:
Extreme Ultraviolet (EUV) Lithography V
Obert R. Wood; Eric M. Panning, Editor(s)

© SPIE. Terms of Use
Back to Top