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Proceedings Paper

Self-assembly of Si-containing block copolymers with high-segregation strength: toward sub-10nm features in directed self-assembly
Author(s): C. Reboul; G. Fleury; K. Aissou; C. Brochon; E. Cloutet; C. Nicolet; X. Chevalier; C. Navarro; R. Tiron; G. Cunge; G. Hadziioannou
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Paper Abstract

Ordered microstructures with nanometrically defined periodicity offer promising opportunities in microelectronic applications for the production of advanced CMOS digital logic circuits. To produce the features and arrays inherent to such technologies, the combination of the “bottom-up” block copolymer self-assembly with “top-down” guiding templates has been successfully introduced leading to new technological breakthroughs. Among the materials used in the direct self-assembly methodology, poly(styrene-b-methylmethacrylate) systems have reached an unprecedented level of maturity which will lead to their introduction into the next technological nodes. However, this system suffers from deficiencies such as a low Flory Huggins parameter (X = 0.04 at 25°C) and a low chemical contrast as regards to the etching processes which could be problematic for targeting sub-22 nm features. Consequently we have developed new systems based on Si-containing block copolymers which are characterized by high segregation strength as well as strong chemical etching contrast. In this contribution, we focus on a poly(lactic acid) / poly(dimethylsiloxane) system exhibiting a cylindrical mesostructure. By controlling the surface energy at the interface between the substrate and the block copolymer domains, we show the possibility to control the orientation of the mesostructure with a methodology comparable to the one used for poly(styrene) / poly(methyl methacrylate) system but with random copolymers having distinct monomers than the block copolymers.

Paper Details

Date Published: 28 March 2014
PDF: 8 pages
Proc. SPIE 9049, Alternative Lithographic Technologies VI, 904925 (28 March 2014); doi: 10.1117/12.2046099
Show Author Affiliations
C. Reboul, LCPO, CNRS, Univ. Bordeaux 1 (France)
G. Fleury, LCPO, CNRS, Univ. Bordeaux 1 (France)
K. Aissou, LCPO, CNRS, Univ. Bordeaux 1 (France)
C. Brochon, LCPO, CNRS, Univ Bordeaux 1 (France)
E. Cloutet, LCPO, CNRS, Univ Bordeaux 1 (France)
C. Nicolet, Arkema France (France)
X. Chevalier, Arkema France (France)
C. Navarro, Arkema France (France)
R. Tiron, CEA, LETI, MINATEC (France)
G. Cunge, LTM CNRS, CEA, LETI (France)
G. Hadziioannou, LCPO, CNRS, Univ. Bordeaux 1 (France)


Published in SPIE Proceedings Vol. 9049:
Alternative Lithographic Technologies VI
Douglas J. Resnick; Christopher Bencher, Editor(s)

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