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Proceedings Paper

Analysis of mix-and-match litho approach for manufacturing 20nm logic-node products
Author(s): Yayi Wei; Chao Zhao; Tianchun Ye
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Paper Abstract

Due to resolution limitation of 1.35NA 193nm immersion lithography, double-exposure and double-patterning (DP) are widely used in 20nm logic process. We propose to replace these DP layers with multi e-beam lithography, i.e. combining two photo masks into one e-beam exposure layer. Our analysis suggests that current multi e-beam tool has the resolution capability to expose these combined layers. The major concern is the mix-and-match overlay, which should be addressed by further improvement of alignment hardware and establishment of an advanced process control system. We believe that the mixing of e-beam and photolithography offers an alternative lithography solution for manufacturing 20nm logic products in small volume.

Paper Details

Date Published: 28 March 2014
PDF: 6 pages
Proc. SPIE 9049, Alternative Lithographic Technologies VI, 90491Y (28 March 2014); doi: 10.1117/12.2046095
Show Author Affiliations
Yayi Wei, Institute of Microelectronics (China)
Chao Zhao, Institute of Microelectronics (China)
Tianchun Ye, Institute of Microelectronics (China)

Published in SPIE Proceedings Vol. 9049:
Alternative Lithographic Technologies VI
Douglas J. Resnick; Christopher Bencher, Editor(s)

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