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Proceedings Paper

Understanding the critical challenges of self-aligned octuple patterning
Author(s): Ji Yu; Wei Xiao; Weiling Kang; Yijian Chen
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Paper Abstract

In this paper, we present a thorough investigation of self-aligned octuple patterning (SAOP) process characteristics, cost structure, integration challenges, and layout decomposition. The statistical characteristics of SAOP CD variations such as multi-modality are analyzed and contributions from various features to CDU and MTT (mean-to-target) budgets are estimated. The gap space is found to have the worst CDU+MTT performance and is used to determine the required overlay accuracy to ensure a satisfactory edge-placement yield of a cut process. Moreover, we propose a 5-mask positive-tone SAOP (pSAOP) process for memory FEOL patterning and a 3-mask negative-tone SAOP (nSAOP) process for logic BEOL patterning. The potential challenges of 2-D SAOP layout decomposition for BEOL applications are identified. Possible decomposition approaches are explored and the functionality of several developed algorithm is verified using 2-D layout examples from Open Cell Library.

Paper Details

Date Published: 31 March 2014
PDF: 15 pages
Proc. SPIE 9052, Optical Microlithography XXVII, 90521P (31 March 2014); doi: 10.1117/12.2046094
Show Author Affiliations
Ji Yu, Peking Univ. (China)
Wei Xiao, Peking Univ. (China)
Weiling Kang, Peking Univ. (China)
Yijian Chen, Peking Univ. (China)


Published in SPIE Proceedings Vol. 9052:
Optical Microlithography XXVII
Kafai Lai; Andreas Erdmann, Editor(s)

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