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Proceedings Paper

A frequency multiplication technique based on EUV near-field imaging
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Paper Abstract

We present a simulation study of the near-field Extreme Ultraviolet (EUV) imaging technique to break the diffraction limit of conventional lithography for spatial frequency multiplication. Rigorous electromagnetic simulations are performed to investigate the near-field EUV imaging performance and its process capability. An optical index, depth of thickness fluctuation (DOT) is defined to characterize the tolerable variation of the imaging-layer thickness, which plays a key role in evaluating the feasibility of this lithography technology. High sensitivity of the near-field image (profile and amplitude) to both absorber CD and propagation depth is found in transverse-electric (TE) and transverse-magnetic (TM) illumination modes. Despite the attractive prospect of applying this near-field imaging technique for semiconductor manufacturing, technical challenges from its optical performance and process control are non-trivial.

Paper Details

Date Published: 28 March 2014
PDF: 9 pages
Proc. SPIE 9049, Alternative Lithographic Technologies VI, 90490D (28 March 2014); doi: 10.1117/12.2045880
Show Author Affiliations
Yijian Chen, Peking Univ. (China)
Yashesh Shroff, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 9049:
Alternative Lithographic Technologies VI
Douglas J. Resnick; Christopher Bencher, Editor(s)

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