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Imaging performance of attenuated phase-shift mask using coherent scattering microscope
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Paper Abstract

The half-tone phase shift mask (PSM) has been suggested for better imaging performances like image contrast, NILS and H-V bias compared to the binary mask (BIM) in EUV lithography. In this paper, we measured imaging performance of a fabricated half-tone attenuated PSM with Coherent Scattering Microscopy (CSM) and the results were compared with simulation data obtained by EM-suite tool. We prepared a half-tone attenuated PSM which has 12.7% reflectivity and 180° phase shift with absorber stack of 16.5mn-thick TaN absorber and 24nm-thick Mo phase shifter. With CSM, an actinic inspection tool, we measured the imaging properties of PSM. The diffraction efficiencies of BIM were measured as 31%, 36%, and 44% for 88 nm, 100 nm, and 128 nm mask CD, respectively, while those of PSM were measured as 45%, 62%, and 81%. Also the aerial image at wafer level obtained by CSM with high volume manufacturing tool’s (HVM) illumination condition (NA=0.33, σ=0.9) showed higher image contrast and NILS with phase shift effect. And the measured data were consistent with the simulation data.

Paper Details

Date Published: 18 March 2014
PDF: 8 pages
Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90481X (18 March 2014); doi: 10.1117/12.2045877
Show Author Affiliations
Jae Uk Lee, Hanyang Univ. (Korea, Republic of)
SeeJun Jeong, Hanyang Univ. (Korea, Republic of)
Seong Chul Hong, Hanyang Univ. (Korea, Republic of)
Seung Min Lee, Hanyang Univ. (Korea, Republic of)
Jinho Ahn, Hanyang Univ. (Korea, Republic of)

Published in SPIE Proceedings Vol. 9048:
Extreme Ultraviolet (EUV) Lithography V
Obert R. Wood; Eric M. Panning, Editor(s)

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