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Proceedings Paper

Photoresist analysis to investigate LWR generation mechanism
Author(s): Kenji Mochida; Shinichi Nakamura; Tooru Kimura; Kazuki Kawai; Yoshihiko Taguchi; Naoki Man; Hideki Hashimoto
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Paper Abstract

In order to understand the mechanism of line width roughness (LWR) generation and to find control knobs for improving resist patterning properties, we developed precise direct analysis method of resist patterns. This method comprise three important processes: 1. Selective sampling of resist pattern surface and pattern core, 2. Analysis and preparative isolation of collected resist ingredient by μGPC, 3. Structural analysis by Py-GC/MS. μGPC and Py-GC/MS analysis provid resist ingredient distribution information inside resist pattern, which includes original polymer, reacted polymer, and photo acid generator (PAG) through the ArF patterning process. This novel analytical method can provide remarkably helpful information about identifying proper control knobs for lithographic performance of ArF resist and for next generation lithography (NGL), especially extreme ultra violet lithography (EUVL) materials, where exposure tool time is very limited.

Paper Details

Date Published: 27 March 2014
PDF: 9 pages
Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 90511Q (27 March 2014); doi: 10.1117/12.2045864
Show Author Affiliations
Kenji Mochida, JSR Corp. (Japan)
Shinichi Nakamura, JSR Corp. (Japan)
Tooru Kimura, JSR Corp. (Japan)
Kazuki Kawai, Toray Research Ctr. (Japan)
Yoshihiko Taguchi, Toray Research Ctr. (Japan)
Naoki Man, Toray Research Ctr. (Japan)
Hideki Hashimoto, Toray Research Ctr. (Japan)

Published in SPIE Proceedings Vol. 9051:
Advances in Patterning Materials and Processes XXXI
Thomas I. Wallow; Christoph K. Hohle, Editor(s)

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