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Proceedings Paper

Energy efficiency, bit rate, and modal properties of 980 nm VCSELs for very-short-reach optical interconnects
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Paper Abstract

Via experimental results supported by numerical modeling we report the energy-efficiency, bit rate, and modal properties of GaAs-based 980 nm vertical cavity surface emitting lasers (VCSELs). Using our newly established Principles for the design and operation of energy-efficient VCSELs as reported in the Invited paper by Moser et al. (SPIE 9001-02 ) [1] along with our high bit rate 980 nm VCSEL epitaxial designs that include a relatively large etalonto- quantum well gain-peak wavelength detuning of about 15 nm we demonstrate record error-free (bit error ratio below 10-12) data transmission performance of 38, 40, and 42 Gbit/s at 85, 75, and 25°C, respectively. At 38 Gbit/s in a back-toback test configuration from 45 to 85°C we demonstrate a record low and highly stable dissipated energy of only ~179 to 177 fJ per transmitted bit. We conclude that our 980 nm VCSELs are especially well suited for very-short-reach and ultra-short-reach optical interconnects where the data transmission distances are about 1 m or less, and about 10 mm or less, respectively.

Paper Details

Date Published: 27 February 2014
PDF: 8 pages
Proc. SPIE 9001, Vertical-Cavity Surface-Emitting Lasers XVIII, 90010B (27 February 2014); doi: 10.1117/12.2045780
Show Author Affiliations
Hui Li, Technische Univ. Berlin (Germany)
Philip Moser, Technische Univ. Berlin (Germany)
Philip Wolf, Technische Univ. Berlin (Germany)
Gunter Larisch, Technische Univ. Berlin (Germany)
Leszek Frasunkiewicz, Łódź Univ. of Technology (Poland)
Maciej Dems, Łódź Univ. of Technology (Poland)
Tomasz Czyszanowski, Łódź Univ. of Technology (Poland)
James A. Lott, Technische Univ. Berlin (Germany)
Dieter Bimberg, Technische Univ. Berlin (Germany)
King Abdulaziz Univ. (Saudi Arabia)

Published in SPIE Proceedings Vol. 9001:
Vertical-Cavity Surface-Emitting Lasers XVIII
James K. Guenter; Chun Lei, Editor(s)

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