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Proceedings Paper

Design and synthesis of novel resist materials for EUVL
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Paper Abstract

The design, synthesis and characterization of non-chemically amplified negative tone electron-beam and EUV resists based on the inclusion of a radiation sensitive sulfonium functional group are outlined.. MAPDST (4-(methacryloyloxy phenyldimethylsulfoniumtriflate) and MANTMS (1-(4-(methacryloyloxy)naphthalen-1-yl)tetrahydro-1H thiopheniumtrifluoromethane sulfonate) monomers each containing the sulfonium group underwent homo- and copolymerizations using free radical polymerization with 2,2'-azobisisobutyronitrile (AIBN) initiator. These resist materials were evaluated by EB lithography using 20 keV electron beam and EUV lithography to obtain sub-20 nm line patterns. These features were optimized ranging from resist coating, pre-exposure bake, exposure to e-beam, postexposure bake, development and imaging. Our investigation showed that these newly synthesized resists are potential viable candidates for EUV lithography based on their ability to form flaw free thin films < 50nm, sensitivity, resolution and LER control.

Paper Details

Date Published: 17 April 2014
PDF: 7 pages
Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90481W (17 April 2014); doi: 10.1117/12.2045736
Show Author Affiliations
V. S. V. Satyanarayana, Indian Institute of Technology Mandi (India)
Vikram Singh, Indian Institute of Technology Mandi (India)
Subrata Ghosh, Indian Institute of Technology Mandi (India)
Satinder Sharma, Indian Institute of Technology Mandi (India)
Kenneth E. Gonsalves, Indian Institute of Technology Mandi (India)
The Univ. of North Carolina at Charlotte (United States)


Published in SPIE Proceedings Vol. 9048:
Extreme Ultraviolet (EUV) Lithography V
Obert R. Wood; Eric M. Panning, Editor(s)

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