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Proceedings Paper

Design and synthesis of new low band gap organic semiconductors for photovoltaic applications
Author(s): M. G. Murali; Udaya Kumar Dalimba
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Paper Abstract

Donor-acceptor (D−A) conjugated polymers have attracted a good deal of attention in recent years. In D−A systems, the introduction of electron withdrawing groups reduces Eg by lowering the LUMO levels whereas, the introduction of electron donating groups reduces Eg by raising the HOMO levels. Also, conjugated polymers with desired HOMO and LUMO energy levels could be obtained by the proper selection of donor and acceptor units. Because of this reason, D−A conjugated polymers are emerging as promising materials particularly for polymer light emitting diodes (PLEDs) and polymer solar cells (PSCs). We report the design and synthesis of four new narrow band gap donor-acceptor (D-A) conjugated polymers, PTCNN, PTCNF, PTCNV and PTCNO, containing electron donating 3,4-didodecyloxythiophene and electron accepting cyanovinylene units. The effects of further addition of electron donating and electron withdrawing groups to the repeating unit of a D-A conjugated polymer (PTCNN) on its optical and electrochemical properties are discussed. The studies revealed that the nature of D and A units as well as the extent of alternate D-A structure influences the optical and the electrochemical properties of the polymers. All the polymers are thermally stable up to a temperature of 300 °C under nitrogen atmosphere. The electrochemical studies revealed that the polymers possess low-lying HOMO energy levels and low-lying LUMO energy levels. In the UV-Vis absorption study, the polymer films displayed broad absorption in the wavelength region of 400−700 nm. The polymers exhibited low optical band gaps in the range 1.70 − 1.77 eV.

Paper Details

Date Published: 8 March 2014
PDF: 10 pages
Proc. SPIE 8987, Oxide-based Materials and Devices V, 898729 (8 March 2014); doi: 10.1117/12.2045655
Show Author Affiliations
M. G. Murali, Indian Institute of Science (India)
Udaya Kumar Dalimba, National Institute of Technology, Karnataka (India)


Published in SPIE Proceedings Vol. 8987:
Oxide-based Materials and Devices V
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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