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Proceedings Paper

Inorganic resist materials based on zirconium phosphonate for atomic force microscope lithography
Author(s): Mankyu Kang; Seonae Kim; JinHyuck Jung; Heebom Kim; Inkyun Shin; Chanuk Jeon; Haiwon Lee
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Paper Abstract

New inorganic resist materials based on metal complexes were investigated for atomic force microscope (AFM) lithography. Phosphoric acids are good for self-assembly because of their strong binding energy. In this work, zirconium phosphonate system are newly synthesized for spin-coatable materials in aqueous solutions and leads to negative tone pattern for improving line edge roughness. Low electron exposure by AFM lithography could generate a pattern by electrochemical reaction and cross-linking of metal-oxo complexes. It has been reported that the minimum pattern results are affected by lithographic speed, and the applied voltage between a tip and a substrate.

Paper Details

Date Published: 27 March 2014
PDF: 8 pages
Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 90511U (27 March 2014); doi: 10.1117/12.2045641
Show Author Affiliations
Mankyu Kang, Hanyang Univ. (Korea, Republic of)
SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Seonae Kim, Hanyang Univ. (Korea, Republic of)
JinHyuck Jung, Hanyang Univ. (Korea, Republic of)
Heebom Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Inkyun Shin, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Chanuk Jeon, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Haiwon Lee, Hanyang Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 9051:
Advances in Patterning Materials and Processes XXXI
Thomas I. Wallow; Christoph K. Hohle, Editor(s)

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