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Proceedings Paper

High-efficiency heterojunction solar cells on crystalline germanium substrates
Author(s): Bahman Hekmatshoar; Davood Shahrjerdi; Marinus Hopstaken
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Paper Abstract

Stand-alone heterojunction (HJ) solar cells demonstrated on crystalline germanium (c-Ge) substrates are proposed for usage as the bottom cells of tandem-junction solar cells in various thin-film solar cell technologies. The emitter of the HJ solar cells is formed by growing thin layers of highly doped hydrogenated microcrystalline silicon (μc-Si:H) and further passivated by growing thin layers of hydrogenated amorphous silicon (a-Si:H). The μc-Si:H and a-Si:H layers are grown in the same reactor using plasma-enhanced chemical vapor deposition (PECVD) at temperatures close to 200°C. The quality of the c-Ge surface passivation by μc-Si:H and a-Si:H has a direct impact on the electrical performance of the HJ solar cells. Conversion efficiencies of 5.9% and 7.2% have been achieved for stand-alone c-Ge solar cells on n-type and p-type c-Ge substrates, respectively. These conversion efficiencies are well-comparable with the conversion efficiencies reported for conventional homojunction solar cells fabricated at temperatures as high as 600°C.

Paper Details

Date Published: 8 March 2014
PDF: 6 pages
Proc. SPIE 8987, Oxide-based Materials and Devices V, 898722 (8 March 2014); doi: 10.1117/12.2045632
Show Author Affiliations
Bahman Hekmatshoar, IBM Thomas J. Watson Research Ctr. (United States)
Davood Shahrjerdi, IBM Thomas J. Watson Research Ctr. (United States)
Marinus Hopstaken, IBM Thomas J. Watson Research Ctr. (United States)

Published in SPIE Proceedings Vol. 8987:
Oxide-based Materials and Devices V
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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