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Proceedings Paper

A study of the effect of pellicle support structures on aerial-image quality in EUV lithography by rigorous electromagnetic simulation
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Paper Abstract

To protect an EUV mask from contamination, a pellicle can be used. However, the pellicle membrane must be very thin due to EUV absorption. As a result, a pellicle support structure is needed to avoid deflection of the membrane by gravity. Previous authors have shown that such a structure would produce a non-uniform intensity distribution on the wafer. In this paper, we use simulation to re-examine the issue. The results show that, when coherent illumination is used, a pellicle support structure would have an undesirable effect on the aerial image. However, we also show that, when partially coherent illumination is used, the intensity non-uniformity caused by the pellicle support structure can be effectively smoothed out, resulting in a perfectly acceptable aerial image.

Paper Details

Date Published: 17 April 2014
PDF: 7 pages
Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90481U (17 April 2014); doi: 10.1117/12.2045618
Show Author Affiliations
Michael S. Yeung, Fastlitho Inc. (United States)
Eytan Barouch, Boston Univ. (United States)
Hye-Keun Oh, Hanyang Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 9048:
Extreme Ultraviolet (EUV) Lithography V
Obert R. Wood; Eric M. Panning, Editor(s)

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