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Proceedings Paper

A comparison of the pattern transfer of line-space patterns from graphoepitaxial and chemoepitaxial block co-polymer directed self-assembly
Author(s): Dan B. Millward; Gurpreet S. Lugani; Ranjan Khurana; Scott L. Light; Ardavan Niroomand; Philip D. Hustad; Peter Trefonas; Shih-wei Chang; Christopher N. Lee; Dung Quach
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Paper Abstract

Block co-polymer directed self-assembly (BCP DSA) has become an area of fervent research activity as a potential alternative or adjunct to EUV lithography or self-aligned pitch multiplication strategies. This presentation will evaluate two DSA strategies for patterning line-space arrays at 30nm pitch: graphoepitaxial DSA with surface-parallel cylinder BCPs and chemoepitaxial DSA with surface-normal lamellar BCPs. A comparison of pattern transfer into hard-mask and substrate films will be made by consideration of line and space CDs, line profile of cross-sectional SEM images, and comparison of relative LWR/SWR. The processes will be benchmarked against Micron’s process used in manufacturing its 16nm half-pitch NAND part.

Paper Details

Date Published: 28 March 2014
PDF: 14 pages
Proc. SPIE 9054, Advanced Etch Technology for Nanopatterning III, 90540M (28 March 2014); doi: 10.1117/12.2045580
Show Author Affiliations
Dan B. Millward, Micron Technology, Inc. (United States)
Gurpreet S. Lugani, Micron Technology, Inc. (United States)
Ranjan Khurana, Micron Technology, Inc. (United States)
Scott L. Light, Micron Technology, Inc. (United States)
Ardavan Niroomand, Micron Technology, Inc. (Belgium)
Philip D. Hustad, Dow Electronic Materials (United States)
Peter Trefonas, Dow Electronic Materials (United States)
Shih-wei Chang, Dow Electronic Materials (United States)
Christopher N. Lee, Dow Electronic Materials (United States)
Dung Quach, Dow Electronic Materials (United States)

Published in SPIE Proceedings Vol. 9054:
Advanced Etch Technology for Nanopatterning III
Gottlieb S. Oehrlein; Qinghuang Lin; Ying Zhang, Editor(s)

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