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Proceedings Paper

High response solar-blind MgZnO photodetectors grown by molecular beam epitaxy
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Paper Abstract

High quality w-MgxZn1-xO thin films were grown epitaxially on c-plane sapphire substrates by plasma-assisted Molecular Beam Epitaxy. ZnO thin films with high crystalline quality, low defect and dislocation densities, and subnanometer surface roughness were achieved by applying a low temperature nucleation layer. By tuning Mg/Zn flux ratio, wurtzite MgxZn1-xO thin films with Mg composition as high as x=0.46 were obtained without phase segregation. Metal- Semiconductor-Metal (MSM) photoconductive and Schottky barrier devices with interdigitated electrode geometry and active surface area of 1 mm2 were fabricated and characterized. Resultant devices showed ~100 A/W peak responsivity at wavelength of ~260nm. We also report on cubic rock salt c-MgxZn1-xO thin films, following a non-traditional approach on MgO substrates, to demonstrate solar-blind photoresponse in MSM photodetectors, realizing a peak responsivity of 460 A/W (@ 250 nm) and 12.6 mA/W (@ 240nm) for mixed phase and single crystal films, respectively. A specific focus of the work is on identifying the impact of various growth parameters on the performance of the c- MgZnO detectors.

Paper Details

Date Published: 8 March 2014
PDF: 12 pages
Proc. SPIE 8987, Oxide-based Materials and Devices V, 89871P (8 March 2014); doi: 10.1117/12.2045555
Show Author Affiliations
Winston V. Schoenfeld, CREOL, The College of Optics and Photonics, Univ. of Central Florida (United States)
Ming Wei, CREOL, The College of Optics and Photonics, Univ. of Central Florida (United States)
R. Casey Boutwell, CREOL, The College of Optics and Photonics, Univ. of Central Florida (United States)
Huiyong Liu, CREOL, The College of Optics and Photonics, Univ. of Central Florida (United States)


Published in SPIE Proceedings Vol. 8987:
Oxide-based Materials and Devices V
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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