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Proceedings Paper

The metal ions from track filter and its impact to product yield in IC manufacturing
Author(s): Tung-Chang Kuo
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Paper Abstract

The influence of metal ions within track filter on the micro-bridge defect is investigated. We focus on the chemical reaction between immersion ArF photoresist and metal ions and then try to figure out the root cause/mechanism by systematic methods and DOE splits. Micro-bridge defect is produced by immersion ArF resist and metal ions reaction. Track filter with higher level metal extract has higher probability of creating higher micro-bridge level and hence has an impact on defect density. In the experiments, different immersion ArF resists are tested. Eventually, from the outcomes we find out the trend which can well explain the hypothesis. Following the final result, we can easily make prediction before filter inline test. Moreover, optimization of our clean track performance via proper filter selection can be achieved as well. We adopt the new methodology and conclusion at current advanced node volume production. More interestingly, in the course of investigation we find out a countermeasure which can effectively reduce filter metal extract concentration and which is applicable to next generation lithography. New filter for verification is the next stage CIP(Continue Improvement Project) and we plan to start it in the near future.

Paper Details

Date Published: 2 April 2014
PDF: 6 pages
Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 90501Z (2 April 2014); doi: 10.1117/12.2045515
Show Author Affiliations
Tung-Chang Kuo, United Microelectronics Corp. (Taiwan)

Published in SPIE Proceedings Vol. 9050:
Metrology, Inspection, and Process Control for Microlithography XXVIII
Jason P. Cain; Martha I. Sanchez, Editor(s)

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