Share Email Print
cover

Proceedings Paper

Lithography focus/exposure control and corrections to improve CDU at post etch step
Author(s): Young Ki Kim; Mark Yelverton; John Tristan; Joungchel Lee; Karsten Gutjahr; Ching-Hsiang Hsu; Hong Wei; Lester Wang; Chen Li; Lokesh Subramany; Woong Jae Chung; Jeong Soo Kim; Vidya Ramanathan; LipKong Yap; Jie Gao; Ram Karur-Shanmugam; Anna Golotsvan; Pedro Herrera; Kevin Huang; Bill Pierson
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

As leading edge lithography moves to advanced nodes in high-mix, high-volume manufacturing environment, automated control of critical dimension (CD) within wafer has become a requirement. Current control methods to improve CD uniformity (CDU) generally rely upon the use of field by field exposure corrections via factory automation or through scanner sub-recipe. Such CDU control methods are limited to lithography step and cannot be extended to etch step. In this paper, a new method to improve CDU at post etch step by optimizing exposure at lithography step is introduced. This new solution utilizes GLOBALFOUNDRIES’ factory automation system and KLA-Tencor’s K-T Analyzer as the infrastructure to calculate and feed the necessary field by field level exposure corrections back to scanner, so as to achieve the optimal CDU at post etch step. CD at post lithography and post etch steps are measured by scatterometry metrology tools respectively and are used by K-T Analyzer as the input for correction calculations. This paper will explain in detail the philosophy as well as the methodology behind this novel CDU control solution. In addition, applications and use cases will be reviewed to demonstrate the capability and potential of this solution. The feasibility of adopting this solution in high-mix, high-volume manufacturing environment will be discussed as well.

Paper Details

Date Published: 2 April 2014
PDF: 9 pages
Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 90501Y (2 April 2014); doi: 10.1117/12.2045433
Show Author Affiliations
Young Ki Kim, GLOBALFOUNDRIES Inc. (United States)
Mark Yelverton, GLOBALFOUNDRIES Inc. (United States)
John Tristan, GLOBALFOUNDRIES Inc. (United States)
Joungchel Lee, GLOBALFOUNDRIES Inc. (United States)
Karsten Gutjahr, GLOBALFOUNDRIES Inc. (United States)
Ching-Hsiang Hsu, GLOBALFOUNDRIES Inc. (United States)
Hong Wei, GLOBALFOUNDRIES Inc. (United States)
Lester Wang, GLOBALFOUNDRIES Inc. (United States)
Chen Li, GLOBALFOUNDRIES Inc. (United States)
Lokesh Subramany, GLOBALFOUNDRIES Inc. (United States)
Woong Jae Chung, GLOBALFOUNDRIES Inc. (United States)
Jeong Soo Kim, GLOBALFOUNDRIES Inc. (United States)
Vidya Ramanathan, KLA-Tencor Corp. (United States)
LipKong Yap, KLA-Tencor Corp. (United States)
Jie Gao, KLA-Tencor Corp. (United States)
Ram Karur-Shanmugam, KLA-Tencor Corp. (United States)
Anna Golotsvan, KLA-Tencor Corp. (United States)
Pedro Herrera, KLA-Tencor Corp. (United States)
Kevin Huang, KLA-Tencor Corp. (United States)
Bill Pierson, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 9050:
Metrology, Inspection, and Process Control for Microlithography XXVIII
Jason P. Cain; Martha I. Sanchez, Editor(s)

© SPIE. Terms of Use
Back to Top