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Proceedings Paper

Dependence of secondary-electron yield on aspect ratio of several trench patterns
Author(s): Daisuke Bizen; Yasunari Sohda; Hideyuki Kazumi
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Paper Abstract

Systematic understanding of the mechanism of secondary-electron (SE) emission is important to simulate an SEM image of a high-aspect-ratio (AR) structure. The simulation technique for a high-AR structure is useful for optimizing the observation conditions of SEM. Trench patterns with AR between 0.5 and 8 were fabricated on the same substrate, and dependence of SE yield on AR of the trench patterns was determined from SEM images for several landing energies of primary electrons. In addition, to understand the SE emission inside a trench, Monte-Carlo simulation of the signal intensity for Si was performed. The SEM observations and simulation results indicate that SEM image contrast at the bottom of a trench improves with decreasing landing energy (owing to a positive charging effect) and that reflection of SEs at the sidewall of a trench is essential for accurately estimating SE emission for the high-AR structure with AR over eight.

Paper Details

Date Published: 2 April 2014
PDF: 7 pages
Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 90500K (2 April 2014); doi: 10.1117/12.2044662
Show Author Affiliations
Daisuke Bizen, Hitachi, Ltd. (Japan)
Yasunari Sohda, Hitachi, Ltd. (Japan)
Hideyuki Kazumi, Hitachi High-Technologies Corp. (Japan)


Published in SPIE Proceedings Vol. 9050:
Metrology, Inspection, and Process Control for Microlithography XXVIII
Jason P. Cain; Martha I. Sanchez, Editor(s)

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