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Proceedings Paper

Synthesis of epitaxial rutile-type VO2 and VO2(B) polymorph films
Author(s): Franklin J. Wong; Shriram Ramanathan
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Paper Abstract

We exploit epitaxial relationships of rutile-type VO2 with (0001) Al2O3, (111) LaAlO3, (10‾10) Al2O3, and (10‾12) Al2O3 to achieve high-quality VO2 thin-film synthesis. We show that the deposition temperature can be lowered when these substrates are employed compared to one with no preferred crystallographic relationship with VO2, such as Si. We also report the first thin-film synthesis of the metastable VO2(B) polymorph on (001) LaAlO3 with a strongly preferred (001) out-of-plane orientation. These results are of interest for integrating VO2 films with other oxides in optoelectronic and reconfigurable device structures.

Paper Details

Date Published: 8 March 2014
PDF: 8 pages
Proc. SPIE 8987, Oxide-based Materials and Devices V, 89870W (8 March 2014); doi: 10.1117/12.2044055
Show Author Affiliations
Franklin J. Wong, Harvard Univ. (United States)
Shriram Ramanathan, Harvard Univ. (United States)

Published in SPIE Proceedings Vol. 8987:
Oxide-based Materials and Devices V
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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