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Proceedings Paper

Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers
Author(s): A. Rajan; S. Sundaram; Y. El Gmili; P. L. Voss; K. Pantzas; T. Moudakir; A. Ougazzaden; D. J. Rogers; F. Hosseini Teherani; V. E. Sandana; P. Bove; K. Prior; R. McClintock; M. Razeghi
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Paper Abstract

Free-standing (0002)-oriented GaN substrates (φ = 2”) were coated with 200 nm of ZnO and used as templates for the growth of GaN thin films. SEM and AFM revealed that such GaN layers had a relatively homogenous surface morphology with an RMS roughness (5 μm x 5 μm) of less than 4nm. XRD studies revealed strained ZnO growth on the GaN substrate and the reproduction of the substrate rocking curve for the GaN overlayers after only a hundred nm of growth, thus indicating that the GaN films had superior crystallographic quality compared to those grown on sapphire or ZnO/sapphire substrates. Quarter-wafer areas of GaN were removed from the GaN substrate (by selective chemical etching away of the ZnO interlayer). The expensive GaN substrates were then reclaimed/reused (without the need for polishing) for a second cycle of ZnO and GaN growth, which gave similar XRD, SEM, CL and AFM results to the first cycle.

Paper Details

Date Published: 2 April 2014
PDF: 8 pages
Proc. SPIE 8987, Oxide-based Materials and Devices V, 898719 (2 April 2014); doi: 10.1117/12.2043704
Show Author Affiliations
A. Rajan, Heriot-Watt Univ. (United Kingdom)
S. Sundaram, Georgia Tech-Lorraine, CNRS (France)
Y. El Gmili, Georgia Tech-Lorraine, CNRS (France)
P. L. Voss, Georgia Tech-Lorraine, CNRS (France)
K. Pantzas, Georgia Tech-Lorraine, CNRS (France)
T. Moudakir, Georgia Tech-Lorraine, CNRS (France)
A. Ougazzaden, Georgia Tech-Lorraine, CNRS (France)
D. J. Rogers, Nanovation (France)
F. Hosseini Teherani, Nanovation (France)
V. E. Sandana, Nanovation (France)
P. Bove, Nanovation (France)
K. Prior, Heriot-Watt Univ. (United Kingdom)
R. McClintock, Northwestern Univ. (United States)
M. Razeghi, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 8987:
Oxide-based Materials and Devices V
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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