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Proceedings Paper

Microscopic models of non-radiative and high-current effects in LEDs: state of the art and future developments
Author(s): Francesco Bertazzi; Michele Goano; Marco Calciati; Xiangyu Zhou; Giovanni Ghione; Enrico Bellotti
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Paper Abstract

Auger recombination is at the hearth of the debate on droop, the decline of the internal quantum efficiency at high injection levels. The theory of Auger recombination in quantum wells is reviewed. The proposed microscopic model is based on a full-Brillouin-zone description of the electronic structure obtained by nonlocal empirical pseudopotential calculations and the linear combination of bulk bands. The lack of momentum conservation along the confining direction in InGaN/GaN quantum wells enhances direct (i.e. phononless) Auger transitions, leading to Auger coefficients in the range of those predicted for phonon-dressed processes in bulk InGaN.

Paper Details

Date Published: 27 February 2014
PDF: 7 pages
Proc. SPIE 9003, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII, 900310 (27 February 2014); doi: 10.1117/12.2043234
Show Author Affiliations
Francesco Bertazzi, Politecnico di Torino (Italy)
IEIIT-CNR (Italy)
Michele Goano, Politecnico di Torino (Italy)
IEIIT-CNR (Italy)
Marco Calciati, Politecnico di Torino (Italy)
Xiangyu Zhou, Politecnico di Torino (Italy)
Giovanni Ghione, Politecnico di Torino (Italy)
Enrico Bellotti, Boston Univ. (United States)


Published in SPIE Proceedings Vol. 9003:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Martin Strassburg, Editor(s)

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