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Proceedings Paper

Study of acid diffusion behaves form PAG by using top coat method
Author(s): Atsushi Sekiguchi; Yoko Matsumoto
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Paper Abstract

Our past research on measurements of simulation parameters for ArF resists focused on establishing methods for measuring the following parameters:[1]-[4] • Development parameters[1] • PEB parameters[2] • Dill’s ABC parameters[3] • Quencher parameter[4] We entered these parameters into a lithography simulator and performed ArF resist simulations.We then explored ways to optimize the ArF resist material and process. This paper reports on our study of methods for measuring the diffusion length of acid generated from PAG during exposures. In our experiment, we applied a PAG-containing top coat (TC) material (second layer) to a PAG-free ArF resist (first layer), then performed the exposure and PEB processes. The acid generated in the TC during the exposure diffused into the ArF resist in the lower layer (first layer) when PEB was performed. The process of developing this sample removed the TC in the second layer and the parts of the first layer into which the acid had diffused.We obtained the acid diffusion length based on the quantity of film removed by the development. We calculated the acid diffusion coefficient after varying the exposure value and repeating the measurement. For this report, we also performed measurements to determine how differences in PAG anion size, amount of quencher additive, and PEB temperature affected the acid diffusion coefficient.We entered the measurements obtained into the PROLITH simulator and explored the effects of acid diffusion on pattern profile.

Paper Details

Date Published: 27 March 2014
PDF: 13 pages
Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 90511S (27 March 2014); doi: 10.1117/12.2043205
Show Author Affiliations
Atsushi Sekiguchi, Litho Tech Japan Corp. (Japan)
Yoko Matsumoto, Litho Tech Japan Corp. (Japan)


Published in SPIE Proceedings Vol. 9051:
Advances in Patterning Materials and Processes XXXI
Thomas I. Wallow; Christoph K. Hohle, Editor(s)

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