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Proceedings Paper

Reactive ion etching and OES endpoint detection of AlCu thin film
Author(s): Jun Gou; Hui Ling Tai; Jun Wang; Xiong Bang Wei; Ya Dong Jiang
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Paper Abstract

Patterning of AlCu alloy thin films is a key technology in MEMS fabrication. In this paper, reactive ion etching (RIE) process of Al-1%Cu films was described using BCl3 and Cl2 as etching gases and N2 and CH4 as neutral gases. A four-step process was presented to meet the etching requirements using BCl3, Cl2, N2 and CF4 as process gases. Optical emission spectroscopy (OES) was used to monitor the state of the plasma in real time. The etching endpoint was detected by detecting the spectral intensity change in the wavelength range of 395 ~ 400nm.

Paper Details

Date Published: 21 December 2013
PDF: 4 pages
Proc. SPIE 9047, 2013 International Conference on Optical Instruments and Technology: Micro/Nano Photonics and Fabrication, 90470K (21 December 2013); doi: 10.1117/12.2042642
Show Author Affiliations
Jun Gou, Univ. of Electronic Science and Technology of China (China)
Hui Ling Tai, Univ. of Electronic Science and Technology of China (China)
Jun Wang, Univ. of Electronic Science and Technology of China (China)
Xiong Bang Wei, Univ. of Electronic Science and Technology of China (China)
Ya Dong Jiang, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 9047:
2013 International Conference on Optical Instruments and Technology: Micro/Nano Photonics and Fabrication
Zhiping Zhou; Changhe Zhou; Zhiping Zhou, Editor(s)

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