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Proceedings Paper

High-contrast gratings for long-wavelength laser integration on silicon
Author(s): Corrado Sciancalepore; Antoine Descos; Damien Bordel; Hélène Duprez; Xavier Letartre; Sylvie Menezo; Badhise Ben Bakir
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Paper Abstract

Silicon photonics is increasingly considered as the most promising way-out to the relentless growth of data traffic in today's telecommunications infrastructures, driving an increase in transmission rates and computing capabilities. This is in fact challenging the intrinsic limit of copper-based, short-reach interconnects and microelectronic circuits in data centers and server architectures to offer enough modulation bandwidth at reasonable power dissipation. In the context of the heterogeneous integration of III-V direct-bandgap materials on silicon, optics with high-contrast metastructures enables the efficient implementation of optical functions such as laser feedback, input/output (I/O) to active/passive components, and optical filtering, while heterogeneous integration of III-V layers provides sufficient optical gain, resulting in silicon-integrated laser sources. The latest ensure reduced packaging costs and reduced footprint for the optical transceivers, a key point for the short reach communications. The invited talk will introduce the audience to the latest breakthroughs concerning the use of high-contrast gratings (HCGs) for the integration of III-V-on-Si verticalcavity surface-emitting lasers (VCSELs) as well as Fabry-Perot edge-emitters (EELs) in the main telecom band around 1.55 μm. The strong near-field mode overlap within HCG mirrors can be exploited to implement unique optical functions such as dense wavelength division multiplexing (DWDM): a 16-λ100-GHz-spaced channels VCSEL array is demonstrated. On the other hand, high fabrication yields obtained via molecular wafer bonding of III-V alloys on silicon-on-insulator (SOI) conjugate excellent device performances with cost-effective high-throughput production, supporting industrial needs for a rapid research-to-market transfer.

Paper Details

Date Published: 19 February 2014
PDF: 11 pages
Proc. SPIE 8995, High Contrast Metastructures III, 89950D (19 February 2014); doi: 10.1117/12.2042390
Show Author Affiliations
Corrado Sciancalepore, CEA-LETI, Minatec (France)
Antoine Descos, CEA-LETI, Minatec (France)
Damien Bordel, CEA-LETI, Minatec (France)
Hélène Duprez, CEA-LETI, Minatec (France)
Xavier Letartre, Institut des Nanotechnologies de Lyon, CNRS, Univ. de Lyon (France)
Sylvie Menezo, CEA-LETI, Minatec (France)
Badhise Ben Bakir, CEA-LETI, Minatec (France)


Published in SPIE Proceedings Vol. 8995:
High Contrast Metastructures III
Connie J. Chang-Hasnain; David Fattal; Fumio Koyama; Weimin Zhou, Editor(s)

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