Share Email Print
cover

Proceedings Paper

Ga-rich Ga(x)In(1-x)P solar cells on Si with 1.95 eV bandgap for ideal III-V/Si photovoltaics
Author(s): Christopher Ratcliff; T. J. Grassman; J. A. Carlin; D. J. Chmielewski; S. A. Ringel
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Theoretical models for III-V compound multijunction solar cells show that solar cells with bandgaps of 1.95-2.3 eV are needed to create ideal optical partitioning of the solar spectrum for device architectures containing three, four and more junctions. For III-V solar cells integrated with an active Si sub-cell, GaInP alloys in the Ga-rich regime are ideal since direct bandgaps of up to ~ 2.25 eV are achieved at lattice constants that can be integrated with appropriate GaAsP, SiGe and Si materials, with efficiencies of almost 50% being predicted using practical solar cell models under concentrated sunlight. Here we report on Ga-rich, lattice-mismatched Ga0.57In0.43P sub-cell prototypes with a bandgap of 1.95 eV grown on tensile step-graded metamorphic GaAsyP1-y buffers on GaAs substrates. The goal is to create a high bandgap top cell for integration with Si-based III-V/Si triple-junction devices. Excellent carrier collection efficiency was measured via internal quantum efficiency measurements and with their design being targeted for multijunction implementation (i.e. they are too thin for single junction cells), initial cell results are encouraging. The first generation of identical 1.95 eV cells on Si were fabricated as well, with efficiencies for these large bandgap, thin single junction cells ranging from 7% on Si to 11% on GaAs without antireflection coatings, systematically tracking the change in defect density as a function of growth substrate.

Paper Details

Date Published: 7 March 2014
PDF: 8 pages
Proc. SPIE 8981, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III, 898118 (7 March 2014); doi: 10.1117/12.2042017
Show Author Affiliations
Christopher Ratcliff, The Ohio State Univ. (United States)
T. J. Grassman, The Ohio State Univ. (United States)
J. A. Carlin, The Ohio State Univ. (United States)
D. J. Chmielewski, The Ohio State Univ. (United States)
S. A. Ringel, The Ohio State Univ. (United States)


Published in SPIE Proceedings Vol. 8981:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III
Alexandre Freundlich; Jean-François Guillemoles, Editor(s)

© SPIE. Terms of Use
Back to Top