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Proceedings Paper

2-micron GaSb-based metamorphic laser grown on GaAs
Author(s): Paveen Apiratikul; Lei He; Richard P. Leavitt; Nathan P. Siwak; Joseph Duperre; Christopher J. K. Richardson
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Paper Abstract

We report GaSb-based broad-area (BA) lasers, ridge-waveguide (RWG) lasers and laterally coupled distributedfeedback (LC-DFB) lasers grown metamorphically on GaAs substrates. Despite the large lattice mismatch, a high crystal quality laser structure was achieved. All lasers operate continuous-wave at room temperature with emission wavelengths near 2-μm. BA lasers emit total output power up to 70 mW at 15°C with low internal loss and low thermal resistance compared to those of pseudomorphic lasers. Single lateral mode RWG lasers demonstrate stable output power over a 1000-hour test and operate continuous-wave up to 70°C. LC-DFB lasers emit total output power of up to 49 mW in a single longitudinal mode and side-mode suppression ratio of 25 dB at a heat-sink temperature of 15°C.

Paper Details

Date Published: 27 February 2014
PDF: 6 pages
Proc. SPIE 9002, Novel In-Plane Semiconductor Lasers XIII, 900216 (27 February 2014); doi: 10.1117/12.2042004
Show Author Affiliations
Paveen Apiratikul, Univ. of Maryland, College Park (United States)
Lab. for Physical Sciences (United States)
Lei He, Univ. of Maryland, College Park (United States)
Lab. for Physical Sciences (United States)
Richard P. Leavitt, Univ. of Maryland, College Park (United States)
Lab. for Physical Sciences (United States)
Nathan P. Siwak, Univ. of Maryland, College Park (United States)
Lab. for Physical Sciences (United States)
Joseph Duperre, Lab. for Physical Sciences (United States)
Christopher J. K. Richardson, Lab. for Physical Sciences (United States)


Published in SPIE Proceedings Vol. 9002:
Novel In-Plane Semiconductor Lasers XIII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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