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Proceedings Paper

ErAs:GaAs extrinsic photoconductivity: a new alternative for 1550-nm-driven THz sources
Author(s): M. Martin; J. Middendorf; E. R. Brown
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Paper Abstract

This paper summarizes our recent progress on the discovery and THz performance of ErAs:GaAs photoconductive devices driven around 1550 nm. We will present the impulse response of such device in a time-domain spectrometer where the detection is realized with a GaAs electro-optic crystal. The full width at half-maximum of the temporal pulse is 500 fs and the corresponding bandwidth is greater than 2.5 THz. We also present different 1550-nm properties of this material including carrier lifetime by pump-probe phototransmission. All evidence to date suggests that the 1550-nm ultrafast behavior in ErAs:GaAs occurs by extrinsic photoconductivity, not two-photon effect.

Paper Details

Date Published: 7 March 2014
PDF: 5 pages
Proc. SPIE 8985, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VII, 898502 (7 March 2014); doi: 10.1117/12.2041781
Show Author Affiliations
M. Martin, Wright State Univ. (United States)
J. Middendorf, Wright State Univ. (United States)
E. R. Brown, Wright State Univ. (United States)


Published in SPIE Proceedings Vol. 8985:
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VII
Laurence P. Sadwick; Créidhe M. O'Sullivan, Editor(s)

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