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Proceedings Paper

Microscope investigation and electrical conductivity of Si-doped n-type Al0.45Ga0.55N layer grown on AlGaN/AlN superlattices
Author(s): S. R. Jeon; S. J. Son; S.-H. Park
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Paper Abstract

We report the growth and characterization of a Si-doped, n-type AlGaN layer with 45% Al composition. For the application of n-type AlGaN layers with high Al composition in ultraviolet emitters, we fabricated an n-Al0.45Ga0.55N layer with high crystalline quality and high electrical conductivity by inserting Al0.85Ga0.15N/AlN superlattices (SLs) to prevent cracks prior to growing the n-type AlGaN layer. The dislocation density in the n-AlGaN layer with 45% Al composition and SLs was less than 2.4 x 1010 cm-2, which was lower than the dislocation density of 5.3 x 1010 cm-2 for the n-AlGaN layer without SLs. The resistivity, mobility, and free electron concentration in the n-type Al0.45Ga0.55N layer with SLs were 2.2 x 10-2 Ω×cm, 55.0 cm2 /V-s, and 5.0 x 1018 cm-3 at room temperature, respectively.

Paper Details

Date Published: 27 February 2014
PDF: 7 pages
Proc. SPIE 9003, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII, 90031S (27 February 2014); doi: 10.1117/12.2041398
Show Author Affiliations
S. R. Jeon, Korea Photonics Technology Institute (Korea, Republic of)
S. J. Son, LG Innotek (Korea, Republic of)
S.-H. Park, Yeungnam Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 9003:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Martin Strassburg, Editor(s)

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