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Proceedings Paper

Analytical modeling of III-V solar cells close to the fundamental limit
Author(s): Matthew P. Lumb; Myles A. Steiner; John F. Geisz; Robert J. Walters
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Paper Abstract

A highly effective strategy of photon management is to use a back surface reflector. In this work, we present a full analytical model incorporating effects from both the modified generation function and photon recycling in GaAs solar cells with a BSR. We discuss the impact of doping concentration, non-radiative recombination, solar cell dimensions and BSR reflectivity on the efficiency, and compare the prediction of the device models to experimental data measured on GaAs devices. We use the model to predict the performance of alternative III-V materials, such as InP, comparing the predicted performance to state-of-the-art GaAs solar cells.

Paper Details

Date Published: 7 March 2014
PDF: 9 pages
Proc. SPIE 8981, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III, 898114 (7 March 2014); doi: 10.1117/12.2041359
Show Author Affiliations
Matthew P. Lumb, The George Washington Univ. (United States)
U.S. Naval Research Lab. (United States)
Myles A. Steiner, National Renewable Energy Lab. (United States)
John F. Geisz, National Renewable Energy Lab. (United States)
Robert J. Walters, U.S. Naval Research Lab. (United States)


Published in SPIE Proceedings Vol. 8981:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III
Alexandre Freundlich; Jean-François Guillemoles, Editor(s)

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