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Proceedings Paper

The effects of electric field on InGaAs quantum well i-region placement in InAlGaAs solar cells
Author(s): Christopher G. Bailey; Matthew P. Lumb; Raymond Hoheisel; Maria Gonzalez; David V. Forbes; Michael K. Yakes; Seth M. Hubbard; Louise C. Hirst; Justin Lorentzen; Joseph G. Tischler; Ken Schmieder; Cory D. Cress; Phillip P. Jenkins; Robert J. Walters
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Paper Abstract

InGaAs quantum well / InAlGaAs barrier solar cells were grown and tested in order to evaluate their solar cell performance. These samples were grown with five layers of QWs at varying depths in the intrinsic region of the n-i-p devices. An external quantum efficiency measurement was used to determine the sub-bandgap spectral responsivity, and showed efficient absorption and collection beyond the bulk material bandedge, from 1280 to 1580 nm. Simulations were performed to evaluate electric field strength as a function of depth and a resonant excitation short-circuit current density measurement was then used to characterize the samples with varied quantum well depths. The electric field acting on carriers, photoexcited into the quantum wells, impacts on the probability of those carriers contributing to the measured short-circuit current. We observe the simulated dependence of carrier collection on electric field in these devices, with a 29% increase in relative carrier collection efficiency between the sample experiencing the highest versus the lowest electric field.

Paper Details

Date Published: 7 March 2014
PDF: 6 pages
Proc. SPIE 8981, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III, 898104 (7 March 2014); doi: 10.1117/12.2041348
Show Author Affiliations
Christopher G. Bailey, U.S. Naval Research Lab. (United States)
Matthew P. Lumb, U.S. Naval Research Lab. (United States)
George Washington Univ. (United States)
Raymond Hoheisel, U.S. Naval Research Lab. (United States)
George Washington Univ. (United States)
Maria Gonzalez, U.S. Naval Research Lab. (United States)
Sotera Defense Solutions (United States)
David V. Forbes, Rochester Institute of Technology (United States)
Michael K. Yakes, U.S. Naval Research Lab. (United States)
Seth M. Hubbard, Rochester Institute of Technology (United States)
Louise C. Hirst, U.S. Naval Research Lab. (United States)
Justin Lorentzen, U.S. Naval Research Lab. (United States)
Joseph G. Tischler, U.S. Naval Research Lab. (United States)
Ken Schmieder, U.S. Naval Research Lab. (United States)
Cory D. Cress, U.S. Naval Research Lab. (United States)
Phillip P. Jenkins, U.S. Naval Research Lab. (United States)
Robert J. Walters, U.S. Naval Research Lab. (United States)


Published in SPIE Proceedings Vol. 8981:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III
Alexandre Freundlich; Jean-François Guillemoles, Editor(s)

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