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Proceedings Paper

Phosphor-free InGaN/GaN/AlGaN core-shell dot-in-a-wire white light-emitting diodes
Author(s): Zetian Mi; Hieu Pham Trung Nguyen; Shaofei Zhang; Ashfiqua T. Connie; Md Golam Kibria; Qi Wang; Ishiang Shih
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Paper Abstract

We have developed phosphor-free InGaN/GaN/AlGaN dot-in-a-wire core-shell white light emitting diodes, which can break the carrier injection efficiency bottleneck of conventional nanowire white light emitting diodes, leading to a dramatic enhancement of the output power. Additionally, such phosphor-free nanowire white light emitting diodes can deliver a very high color rendering index (CRI) of ~92-98.

Paper Details

Date Published: 27 February 2014
PDF: 8 pages
Proc. SPIE 9003, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII, 900306 (27 February 2014); doi: 10.1117/12.2041284
Show Author Affiliations
Zetian Mi, McGill Univ. (Canada)
Hieu Pham Trung Nguyen, McGill Univ. (Canada)
Shaofei Zhang, McGill Univ. (Canada)
Ashfiqua T. Connie, McGill Univ. (Canada)
Md Golam Kibria, McGill Univ. (Canada)
Qi Wang, McGill Univ. (Canada)
Ishiang Shih, McGill Univ. (Canada)


Published in SPIE Proceedings Vol. 9003:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Martin Strassburg, Editor(s)

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