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Proceedings Paper

High power diode lasers emitting from 639 nm to 690 nm
Author(s): L. Bao; M. Grimshaw; M. DeVito; M. Kanskar; W. Dong; X. Guan; S. Zhang; J. Patterson; P. Dickerson; K. Kennedy; S. Li; J. Haden; R. Martinsen
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Paper Abstract

There is increasing market demand for high power reliable red lasers for display and cinema applications. Due to the fundamental material system limit at this wavelength range, red diode lasers have lower efficiency and are more temperature sensitive, compared to 790-980 nm diode lasers. In terms of reliability, red lasers are also more sensitive to catastrophic optical mirror damage (COMD) due to the higher photon energy. Thus developing higher power-reliable red lasers is very challenging. This paper will present nLIGHT’s released red products from 639 nm to 690nm, with established high performance and long-term reliability. These single emitter diode lasers can work as stand-alone singleemitter units or efficiently integrate into our compact, passively-cooled Pearl™ fiber-coupled module architectures for higher output power and improved reliability. In order to further improve power and reliability, new chip optimizations have been focused on improving epitaxial design/growth, chip configuration/processing and optical facet passivation. Initial optimization has demonstrated promising results for 639 nm diode lasers to be reliably rated at 1.5 W and 690nm diode lasers to be reliably rated at 4.0 W. Accelerated life-test has started and further design optimization are underway.

Paper Details

Date Published: 7 March 2014
PDF: 10 pages
Proc. SPIE 8965, High-Power Diode Laser Technology and Applications XII, 896512 (7 March 2014); doi: 10.1117/12.2041278
Show Author Affiliations
L. Bao, nLIGHT Corp. (United States)
M. Grimshaw, nLIGHT Corp. (United States)
M. DeVito, nLIGHT Corp. (United States)
M. Kanskar, nLIGHT Corp. (United States)
W. Dong, nLIGHT Corp. (United States)
X. Guan, nLIGHT Corp. (United States)
S. Zhang, nLIGHT Corp. (United States)
J. Patterson, nLIGHT Corp. (United States)
P. Dickerson, nLIGHT Corp. (United States)
K. Kennedy, nLIGHT Corp. (United States)
S. Li, nLIGHT Corp. (United States)
J. Haden, nLIGHT Corp. (United States)
R. Martinsen, nLIGHT Corp. (United States)


Published in SPIE Proceedings Vol. 8965:
High-Power Diode Laser Technology and Applications XII
Mark S. Zediker, Editor(s)

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