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Proceedings Paper

Simulation of water photo electrolysis with III-nitride semiconductor nano wires
Author(s): Bernd Witzigmann; Maximilian Bettenhausen; Marvin Mewes; Heiko Fülle; Friedhard Römer
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Paper Abstract

Water splitting under illumination with a GaN/InGaN planar and nano wire structure is modeled using a drift diffusion approach. The main features of the experiment such as current density without biasing and current saturation effects are explained by the simulation. The electrolyte where ionic transport occurs is modeled as material with diffusion coefficients matching ionic diffusivity experiments. The simulation allows design and analysis of GaN based nano structures and their water photo electrolysis efficiency.

Paper Details

Date Published: 7 March 2014
PDF: 6 pages
Proc. SPIE 8980, Physics and Simulation of Optoelectronic Devices XXII, 89800S (7 March 2014); doi: 10.1117/12.2041230
Show Author Affiliations
Bernd Witzigmann, Univ. Kassel (Germany)
Maximilian Bettenhausen, Univ. Kassel (Germany)
Marvin Mewes, Univ. Kassel (Germany)
Heiko Fülle, Univ. Kassel (Germany)
Friedhard Römer, Univ. Kassel (Germany)


Published in SPIE Proceedings Vol. 8980:
Physics and Simulation of Optoelectronic Devices XXII
Bernd Witzigmann; Marek Osiński; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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