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Proceedings Paper

Light-emitting diodes using InGaN/GaN nanowires grown on SiO2/Si
Author(s): Junseok Heo; Shafat Jahangir; Pallab Bhattacharya
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Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 898624; doi: 10.1117/12.2041178
Show Author Affiliations
Junseok Heo, Ajou Univ. (Korea, Republic of)
Shafat Jahangir, Univ. of Michigan (United States)
Pallab Bhattacharya, Univ. of Michigan (United States)


Published in SPIE Proceedings Vol. 8986:
Gallium Nitride Materials and Devices IX
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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