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Proceedings Paper

Optical and electrical characterization of surface passivated GaAs nanostructures
Author(s): Shermin Arab; Chun Yung Chi; Maoqing Yao; Chia-Chi Chang; P. Daniel Dapkus; Stephen B. Cronin
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Paper Abstract

GaAs nanostructures are used in different optoelectronic applications including solar cells, LEDs and fast electronics. Although GaAs shows outstanding optical properties, it suffers from surface states and consequently high surface recombination velocity. The surface depletion effects lead to semi-insulating behaviors in GaAs devices. Passivation of GaAs nanostructures (AlGaAs or ionic liquid) lead to surface stability and improvement in optoelectronic properties. We provide a systematic study to compare the optical and electrical improvement after passivation (AlGaAs or ionic liquid) of GaAs nanostructure including nanowires and nanosheets. Both room temperature and low temperature photoluminescent (PL) spectra indicate increase in optical activity of GaAs nanostructures after passivation. Electron beam induced current (EBIC) measurements reveal the diffusion length of carries in different GaAs nanostructures.

Paper Details

Date Published: 19 February 2014
PDF: 10 pages
Proc. SPIE 8996, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XI, 89960G (19 February 2014); doi: 10.1117/12.2040999
Show Author Affiliations
Shermin Arab, The Univ. of Southern California, Los Angeles (United States)
Chun Yung Chi, The Univ. of Southern California, Los Angeles (United States)
Maoqing Yao, The Univ. of Southern California, Los Angeles (United States)
Chia-Chi Chang, The Univ. of Southern California, Los Angeles (United States)
P. Daniel Dapkus, The Univ. of Southern California, Los Angeles (United States)
Stephen B. Cronin, The Univ. of Southern California, Los Angeles (United States)


Published in SPIE Proceedings Vol. 8996:
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XI
Diana L. Huffaker; Frank Szmulowicz; Holger Eisele, Editor(s)

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