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Proceedings Paper

Degradation modeling of InGaP/GaAs/Ge triple-junction solar cells irradiated by protons
Author(s): S. I. Maximenko; M. P. Lumb; S. R. Messenger; R. Hoheisel; C. Affouda; D. Scheiman; M. Gonzalez; J. Lorentzen; P. P. Jenkins; R. J. Walters
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Paper Abstract

Experimental results on triple-junction solar cells irradiated by 3 MeV proton irradiation to very high damage levels are presented. The minority carrier transport properties were obtained through quantum efficiency and EBIC measurements and an analytical drift-diffusion solver was used in understanding the results for different degradation levels where multiple damage mechanisms are evident.

Paper Details

Date Published: 7 March 2014
PDF: 8 pages
Proc. SPIE 8981, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III, 89810U (7 March 2014); doi: 10.1117/12.2040938
Show Author Affiliations
S. I. Maximenko, U.S. Naval Research Lab. (United States)
M. P. Lumb, The George Washington Univ. (United States)
S. R. Messenger, U.S. Naval Research Lab. (United States)
R. Hoheisel, The George Washington Univ. (United States)
C. Affouda, U.S. Naval Research Lab. (United States)
D. Scheiman, U.S. Naval Research Lab. (United States)
M. Gonzalez, Sotera Defense Solutions, Inc. (United States)
J. Lorentzen, U.S. Naval Research Lab. (United States)
P. P. Jenkins, U.S. Naval Research Lab. (United States)
R. J. Walters, U.S. Naval Research Lab. (United States)


Published in SPIE Proceedings Vol. 8981:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III
Alexandre Freundlich; Jean-François Guillemoles, Editor(s)

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