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Proceedings Paper

High reliability of high power and high brightness diode lasers
Author(s): M. Kanskar; L. Bao; J. Bai; Z. Chen; D. Dahlen; M. DeVito; W. Dong; M. Grimshaw; J. Haden; X. Guan; M. Hemenway; K. Kennedy; R. Martinsen; J. Tibbals; W. Urbanek; S. Zhang
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Paper Abstract

We report on continued progress in the development of high power and high brightness single emitter laser diodes from 790 nm to 980 nm for reliable use in industrial and pumping applications. High performance has been demonstrated in nLIGHT’s diode laser technology in this spectral range with corresponding peak electrical-to-optical power conversion efficiency of ~65%. These pumps have been incorporated into nLIGHT’s fiber-coupled pump module, elementTM. We report the latest updates on performance and reliability of chips and fiber-coupled modules. This paper also includes a new chip design with significantly narrower slow-axis divergence which enables further improved reliable power and brightness. Preliminary reliability assessment data for these devices will be presented here as well.

Paper Details

Date Published: 7 March 2014
PDF: 10 pages
Proc. SPIE 8965, High-Power Diode Laser Technology and Applications XII, 896508 (7 March 2014); doi: 10.1117/12.2040851
Show Author Affiliations
M. Kanskar, nLIGHT Corp. (United States)
L. Bao, nLIGHT Corp. (United States)
J. Bai, nLIGHT Corp. (United States)
Z. Chen, nLIGHT Corp. (United States)
D. Dahlen, nLIGHT Corp. (United States)
M. DeVito, nLIGHT Corp. (United States)
W. Dong, nLIGHT Corp. (United States)
M. Grimshaw, nLIGHT Corp. (United States)
J. Haden, nLIGHT Corp. (United States)
X. Guan, nLIGHT Corp. (United States)
M. Hemenway, nLIGHT Corp. (United States)
K. Kennedy, nLIGHT Corp. (United States)
R. Martinsen, nLIGHT Corp. (United States)
J. Tibbals, nLIGHT Corp. (United States)
W. Urbanek, nLIGHT Corp. (United States)
S. Zhang, nLIGHT Corp. (United States)

Published in SPIE Proceedings Vol. 8965:
High-Power Diode Laser Technology and Applications XII
Mark S. Zediker, Editor(s)

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