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p-Type InN nanowires: towards ultrahigh speed nanoelectronics and nanophotonics
Author(s): Songrui Zhao; Zetian Mi; Binh Huy Le
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Paper Abstract

In this paper, we demonstrate that p-type InN nanowires can be realized by direct magnesium (Mg) doping. X-ray photoelectron spectroscopy experiments on the sidewalls of Mg-doped InN nanowires indicate no surface electron accumulation with the background electron concentration below 1×1016 cm-3. The presence of Mg-acceptors is clearly observed by the low-temperature photoluminescence (PL) spectroscopy, which shows a band-to-band recombination PL peak and a Mg-acceptor energy level related PL peak. The peak energy separation is about 60 meV, which is consistent with the Mg activation energy in InN. Single nanowire field-effect transistors are further fabricated and investigated, which clearly exhibits a p-type transistor behavior, representing the first direct evidence for p-type conduction in any InN structures. The potential device applications based on InN nanowires are also discussed.

Paper Details

Date Published: 8 March 2014
PDF: 7 pages
Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 898617 (8 March 2014); doi: 10.1117/12.2040847
Show Author Affiliations
Songrui Zhao, McGill Univ. (Canada)
Zetian Mi, McGill Univ. (Canada)
Binh Huy Le, McGill Univ. (Canada)

Published in SPIE Proceedings Vol. 8986:
Gallium Nitride Materials and Devices IX
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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