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Proceedings Paper

Electro-luminescent cooling in the deep sub-bandgap bias regime
Author(s): Parthiban Santhanam
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Paper Abstract

Recent work on electro-luminescent cooling has focused either on diodes at forward bias voltages just below the bandgap energy, where high cooling power density is possible, or voltages below the thermal voltage, where the effect is more tolerant to parasitic non-radiative recombination. Here we consider the possibilities for diodes designed to operate at intermediate voltages. Numerical calculations suggest that design for this regime may enable near- and mid-infrared devices capable of solid-state refrigeration with sufficient power density for some applications.

Paper Details

Date Published: 27 January 2015
PDF: 16 pages
Proc. SPIE 9000, Laser Refrigeration of Solids VII, 900007 (27 January 2015); doi: 10.1117/12.2040497
Show Author Affiliations
Parthiban Santhanam, Massachusetts Institute of Technology (United States)

Published in SPIE Proceedings Vol. 9000:
Laser Refrigeration of Solids VII
Richard I. Epstein; Denis V. Seletskiy; Mansoor Sheik-Bahae, Editor(s)

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