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Proceedings Paper

Beryllium implant activation and damage recovery study in n-type GaSb
Author(s): N. Rahimi; M. Behzadirad; Emma J. Renteria; D. M. Shima; Ayse J. Muniz; T. Busani; Olga Lavrova; G. Balakrishnan; L. F. Lester
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Paper Abstract

Damage induced by the implantation of beryllium in n-type GaSb and its removal by Rapid Thermal Annealing (RTA) are studied in detail by Atomic Force Microscopy (AFM), Cross Sectional Transmission Electron Microscopy (XTEM) and Energy Dispersive X-ray Spectroscopy (EDS). RTA has been implemented with different times and temperatures in order to optimize ion activation and to avoid Sb outdiffusion during the process. Results indicate a lattice quality that is close to pristine GaSb for samples annealed at 600 °C for 10s using a thick Si3N4 capping layer. Electrical response of the implanted diodes is measured and characterized as function of different annealing conditions.

Paper Details

Date Published: 7 March 2014
PDF: 6 pages
Proc. SPIE 8981, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III, 89811Q (7 March 2014); doi: 10.1117/12.2040276
Show Author Affiliations
N. Rahimi, The Univ. of New Mexico (United States)
M. Behzadirad, The Univ. of New Mexico (United States)
Emma J. Renteria, The Univ. of New Mexico (United States)
D. M. Shima, The Univ. of New Mexico (United States)
Ayse J. Muniz, The Univ. of New Mexico (United States)
T. Busani, The Univ. of New Mexico (United States)
Olga Lavrova, The Univ. of New Mexico (United States)
G. Balakrishnan, The Univ. of New Mexico (United States)
L. F. Lester, Virginia Polytechnic Institute and State Univ. (United States)


Published in SPIE Proceedings Vol. 8981:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III
Alexandre Freundlich; Jean-François Guillemoles, Editor(s)

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