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Proceedings Paper

Progress towards commercialization of 25-Gb/s VCSELs
Author(s): Li Wang; Chuan Xie; Neinyi Li; Shenghong Huang
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Paper Abstract

In this paper, we will present the development progress of 850-nm VCSELs operating at 25 Gbit/s and beyond at Sumitomo Electric Device Innovations USA. With improved growth of indium-containing quantum wells, we have demonstrated low-power-consumption VCSELs that can operate at 25 – 28 Gbit/s with reduced current density and enhanced reliability. We will also present recent progress on the improved performance of the new device in EDR cables.

Paper Details

Date Published: 27 February 2014
PDF: 6 pages
Proc. SPIE 9001, Vertical-Cavity Surface-Emitting Lasers XVIII, 90010D (27 February 2014); doi: 10.1117/12.2040187
Show Author Affiliations
Li Wang, Sumitomo Electric Device Innovations, U.S.A., Inc. (United States)
Chuan Xie, Sumitomo Electric Device Innovations, U.S.A., Inc. (United States)
Neinyi Li, Sumitomo Electric Device Innovations, U.S.A., Inc. (United States)
Shenghong Huang, Sumitomo Electric Device Innovations, U.S.A., Inc. (United States)


Published in SPIE Proceedings Vol. 9001:
Vertical-Cavity Surface-Emitting Lasers XVIII
James K. Guenter; Chun Lei, Editor(s)

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