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Proceedings Paper

Internal quantum efficiency and tunable colour temperature in monolithic white InGaN/GaN LED
Author(s): Ilya E. Titkov; Amit Yadav; Vera L Zerova; Modestas Zulonas; Andrey F. Tsatsulnikov; Wsevolod V. Lundin; Alexey V. Sakharov; Edik U. Rafailov
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Paper Abstract

Internal Quantum Efficiency (IQE) of two-colour monolithic white light emitting diode (LED) was measured by temperature dependant electro-luminescence (TDEL) and analysed with modified rate equation based on ABC model. External, internal and injection efficiencies of blue and green quantum wells were analysed separately. Monolithic white LED contained one green InGaN QW and two blue QWs being separated by GaN barrier. This paper reports also the tunable behaviour of correlated colour temperature (CCT) in pulsed operation mode and effect of self-heating on device performance.

Paper Details

Date Published: 8 March 2014
PDF: 8 pages
Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 89862A (8 March 2014); doi: 10.1117/12.2040086
Show Author Affiliations
Ilya E. Titkov, Univ. of Dundee (United Kingdom)
Amit Yadav, Univ. of Dundee (United Kingdom)
Vera L Zerova, Univ. of Dundee (United Kingdom)
Modestas Zulonas, Univ. of Dundee (United Kingdom)
Andrey F. Tsatsulnikov, Ioffe Physico-Technical Institute (Russian Federation)
Wsevolod V. Lundin, Ioffe Physico-Technical Institute (Russian Federation)
Alexey V. Sakharov, Ioffe Physico-Technical Institute (Russian Federation)
Edik U. Rafailov, Univ. of Dundee (United Kingdom)
Aston Univ. (United Kingdom)


Published in SPIE Proceedings Vol. 8986:
Gallium Nitride Materials and Devices IX
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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