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Proceedings Paper

High differential efficiency tilted wave laser
Author(s): N. N. Ledentsov; V. A. Shchukin; N. Yu. Gordeev; Yu. M. Shernyakov; A. S. Payusov; M. V. Maximov; N. A. Kaluzhniy; S. A. Mintairov; V. M. Lantratov; K. A. Vashanova; M. M. Kulagina; S. Rouvimov
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Paper Abstract

We report results on 1060 nm GaAs/GaAlAs–based Tilted Wave Lasers employing multiple InGaAs quantum wells without strain compensation as active medium. The devices are edge–emitting lasers composed of a thin active waveguide optically coupled to a thick passive waveguide responsible to form a tilted optical wave that results in two narrow lobes in the vertical far field profile of the emitted laser light. Devices with different thicknesses of the passive waveguide have been fabricated. The laser with the 26 μm–thick waveguide has low internal losses of 1.4 cm–1, reaches for the as cleaved facets device with 1.5 mm–long cavity the differential efficiency of 81%. The 50 μm broad area device demonstrates the maximum wall–plug efficiency in the continuous wave (cw) mode ~50% and the linear output power up to and above 4 W. The laser light is concentrated in two narrow vertical beams, each 2° full width at half maximum in a good agreement with theory.

Paper Details

Date Published: 7 March 2014
PDF: 12 pages
Proc. SPIE 8965, High-Power Diode Laser Technology and Applications XII, 89650Q (7 March 2014); doi: 10.1117/12.2039955
Show Author Affiliations
N. N. Ledentsov, VI Systems GmbH (Germany)
Ioffe Physico-Technical Institute (Russian Federation)
V. A. Shchukin, VI Systems GmbH (Germany)
Ioffe Physico-Technical Institute (Russian Federation)
N. Yu. Gordeev, Ioffe Physico-Technical Institute (Russian Federation)
St. Petersburg Academic Univ. (Russian Federation)
Yu. M. Shernyakov, Ioffe Physico-Technical Institute (Russian Federation)
St. Petersburg Academic Univ. (Russian Federation)
A. S. Payusov, Ioffe Physico-Technical Institute (Russian Federation)
St. Petersburg Academic Univ. (Russian Federation)
M. V. Maximov, Ioffe Physico-Technical Institute (Russian Federation)
St. Petersburg Academic Univ. (Russian Federation)
N. A. Kaluzhniy, Ioffe Physico-Technical Institute (Russian Federation)
S. A. Mintairov, Ioffe Physico-Technical Institute (Russian Federation)
V. M. Lantratov, Ioffe Physico-Technical Institute (Russian Federation)
K. A. Vashanova, Ioffe Physico-Technical Institute (Russian Federation)
M. M. Kulagina, Ioffe Physico-Technical Institute (Russian Federation)
S. Rouvimov, Univ. of Notre Dame (United States)


Published in SPIE Proceedings Vol. 8965:
High-Power Diode Laser Technology and Applications XII
Mark S. Zediker, Editor(s)

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