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Proceedings Paper

Carrier dynamics in dilute II-VI oxide highly mismatched alloys
Author(s): Yan-Cheng Lin; Wu-Ching Chou; Jen-Inn Chyi; Tooru Tanaka
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Paper Abstract

This study explores comprehensively the carrier dynamics in ZnSeO and ZnTeO using photoluminescence (PL) and time-resolved PL spectroscopy. As the O concentration increases, the PL emissions shift toward lower energies. Additionally, the PL lifetime increases with increasing O contents and the decay curves exhibit complex behavior. In the case of ZnSeO, the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. The incorporation of O in ZnTe generates a wide distribution of electron localization below the energy of the E- conduction subband, and these cause broad PL emission and serve as another intermediate band. Electrons in both the E+ and the E- conduction subbands favor rapid relaxation to low energy states. Moreover, temperature-independent long carrier lifetimes (> 130.0 ns) that are induced by localized electrons increase with O concentration.

Paper Details

Date Published: 8 March 2014
PDF: 9 pages
Proc. SPIE 8987, Oxide-based Materials and Devices V, 89870D (8 March 2014); doi: 10.1117/12.2039837
Show Author Affiliations
Yan-Cheng Lin, National Chiao Tung Univ. (Taiwan)
Wu-Ching Chou, National Chiao Tung Univ. (Taiwan)
Jen-Inn Chyi, National Central Univ. (Taiwan)
Tooru Tanaka, Saga Univ. (Japan)

Published in SPIE Proceedings Vol. 8987:
Oxide-based Materials and Devices V
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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