Share Email Print
cover

Proceedings Paper

Carrier dynamics in dilute II-VI oxide highly mismatched alloys
Author(s): Yan-Cheng Lin; Wu-Ching Chou; Jen-Inn Chyi; Tooru Tanaka
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

This study explores comprehensively the carrier dynamics in ZnSeO and ZnTeO using photoluminescence (PL) and time-resolved PL spectroscopy. As the O concentration increases, the PL emissions shift toward lower energies. Additionally, the PL lifetime increases with increasing O contents and the decay curves exhibit complex behavior. In the case of ZnSeO, the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. The incorporation of O in ZnTe generates a wide distribution of electron localization below the energy of the E- conduction subband, and these cause broad PL emission and serve as another intermediate band. Electrons in both the E+ and the E- conduction subbands favor rapid relaxation to low energy states. Moreover, temperature-independent long carrier lifetimes (> 130.0 ns) that are induced by localized electrons increase with O concentration.

Paper Details

Date Published: 8 March 2014
PDF: 9 pages
Proc. SPIE 8987, Oxide-based Materials and Devices V, 89870D (8 March 2014); doi: 10.1117/12.2039837
Show Author Affiliations
Yan-Cheng Lin, National Chiao Tung Univ. (Taiwan)
Wu-Ching Chou, National Chiao Tung Univ. (Taiwan)
Jen-Inn Chyi, National Central Univ. (Taiwan)
Tooru Tanaka, Saga Univ. (Japan)


Published in SPIE Proceedings Vol. 8987:
Oxide-based Materials and Devices V
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

© SPIE. Terms of Use
Back to Top