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Proceedings Paper

High quality large area ELOG InP on silicon for photonic integration using conventional optical lithography
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Paper Abstract

A simple method of growing large areas of InP on Si through Epitaxial Lateral Overgrowth (ELOG) is presented. Isolated areas of high quality InP suitable for photonic integration are grown in deeply etched SiO2 mask fabricated using conventional optical lithography and reactive ion etching. This method is particularly attractive for monolithically integrating laser sources grown on InP with Si/SiO2 waveguide structure as the mask. The high optical quality of multi quantum well (MQW) layers grown on the ELOG layer is promisingly supportive of the feasibility of this method for mass production.

Paper Details

Date Published: 8 March 2014
PDF: 9 pages
Proc. SPIE 8989, Smart Photonic and Optoelectronic Integrated Circuits XVI, 898904 (8 March 2014); doi: 10.1117/12.2039794
Show Author Affiliations
Himanshu Kataria, KTH Royal Institute of Technology (Sweden)
Wondwosen T. Metaferia, KTH Royal Institute of Technology (Sweden)
Carl Junesand, KTH Royal Institute of Technology (Sweden)
Chong Zhang, Univ. of California, Santa Barbara (United States)
John E. Bowers, Univ. of California, Santa Barbara (United States)
Sebastian Lourdudoss, KTH Royal Institute of Technology (Sweden)


Published in SPIE Proceedings Vol. 8989:
Smart Photonic and Optoelectronic Integrated Circuits XVI
Louay A. Eldada; El-Hang Lee; Sailing He, Editor(s)

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