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Proceedings Paper

Electroluminescence from ZnO nanowire-based heterojunction LED
Author(s): D. Nakamura; N. Tetsuyama; T. Shimogaki; M. Higashihata; H. Ikenoue; T. Okada
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Paper Abstract

We have demonstrated that fabrication of the ZnO nanowire/GaN hetero-junction light emitting diode (LED) by contacting the tip of the ZnO nanowires with the GaN film, and UV electroluminescence from the p-n junction. In this study, we fabricated the heterojunction by directly-growth of the ZnO nanowires on the GaN film using nanoparticleassisted pulsed laser deposition. Photoluminescence spectrum of the ZnO nanowires showed a weak near-band-edge ultraviolet (UV) emission and a visible broad emission, which was related to transition by ZnO defect state. We applied a selective laser irradiation to the p-n junction of the ZnO-based LED. The UV emission was strongly enhanced from the laser-irradiated p-n junction.

Paper Details

Date Published: 8 March 2014
PDF: 6 pages
Proc. SPIE 8987, Oxide-based Materials and Devices V, 89870H (8 March 2014); doi: 10.1117/12.2039705
Show Author Affiliations
D. Nakamura, Kyushu Univ. (Japan)
N. Tetsuyama, Kyushu Univ. (Japan)
T. Shimogaki, Kyushu Univ. (Japan)
M. Higashihata, Kyushu Univ. (Japan)
H. Ikenoue, Kyushu Univ. (Japan)
T. Okada, Kyushu Univ. (Japan)


Published in SPIE Proceedings Vol. 8987:
Oxide-based Materials and Devices V
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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