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Proceedings Paper

Cu(In,Ga)Se2 mesa microdiodes: study of edge recombination and behaviour under concentrated sunlight
Author(s): M. Paire; C. Jean; L. Lombez; S. Collin; J.-L. Pelouard; D. Lincot; J.-F. Guillemoles
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Paper Abstract

In order to develop photovoltaic devices with increased efficiency using less rare semiconductor materials, the concentrating approach is applied on Cu(In,Ga)Se2 thin film devices. For this purpose, Cu(In,Ga)Se2 microcells with a mesa design are fabricated. The influence of the edge recombination signal is analyzed. It is found that with an appropriate etching procedure, devices as small as 50x50 μm do not experience edge recombination efficiency limitations. Under concentration, significant Voc gains are seen, leading to an absolute efficiency increase of two points per decade.

Paper Details

Date Published: 7 March 2014
PDF: 4 pages
Proc. SPIE 8981, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III, 89810Z (7 March 2014); doi: 10.1117/12.2039579
Show Author Affiliations
M. Paire, Institut de Recherche et Développement sur l'Energie Photovoltaïque, CNRS (France)
C. Jean, Institut de Recherche et Développement sur l'Energie Photovoltaïque, CNRS (France)
L. Lombez, Institut de Recherche et Développement sur l'Energie Photovoltaïque, CNRS (France)
S. Collin, Lab. de Photonique et de Nanostructures, CNRS (France)
J.-L. Pelouard, Lab. de Photonique et de Nanostructures, CNRS (France)
D. Lincot, Institut de Recherche et Développement sur l'Energie Photovoltaïque, CNRS (France)
J.-F. Guillemoles, Institut de Recherche et Développement sur l'Energie Photovoltaïque, CNRS (France)


Published in SPIE Proceedings Vol. 8981:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III
Alexandre Freundlich; Jean-François Guillemoles, Editor(s)

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